SiC Nitridation by NH3 Annealing and Its Effects in MOS Capacitors with Deposited SiO2 Films

Journal of Electronic Materials v. 44, n. 8, p. 2823-2828, 2015 1.798 10.1007/s11664-015-3757-x Pitthan Filho, E.; Gobbi, A. L.; Boudinov, H.; Stedile, F. C. 2015