NANOFABRICATION

Equipment

Electron Beam Lithography

  • Beam energy: 20 eV – 30 keV;
  • Beam size: ≤ 1.6 nm at 20 keV;
  • Current: 5 pA – 20 nA;
  • Writing speed: 0.125 Hz – 20 MHz;
  • Sample size: ≤100mm;
  • Availability of electron-resist to positive and negative types

Resin spreading/cleaning/development

  • Substrate Size: Up to 100mm diameter wafers;
  • Maximum speed: 9,900 rpm;
  • Vacuum: mechanical pump;
  • Cleaning and revealing polypropylene fume hood.

Electron Beam Lithography

  • Beam energy: 20 eV – 30 keV;
  • Beam size: ≤ 1.6 nm at 20 keV;
  • Current: 5 pA – 20 nA;
  • Writing speed: 0.125 Hz – 20 MHz;
  • Sample size: ≤100mm;
  • SEM;
  • EDS;
    electrical characterization
    Source: https://www.raith.com/product/eline-plus
    Commissioned until June 2021

Resin spreading/cleaning/development

  • Substrate Size: Up to 100mm diameter wafers;
  • Maximum speed: 9,900 rpm;
  • Vacuum: mechanical pump;
  • Cleaning and revealing polypropylene fume hood.