LNNano - Brazilian Nanotechnology National Laboratory


Strain mapping of a semiconductor multilayer. The strain was obtained by processing a high resolution image (below) using circular masks on the FFT of the image. The HRTEM image was obtained on the TEM-MSC. A Wiener filter to enhance the high resolution pattern. The GaP layer and the GaAs layer with InAs islands can be distinguished due to the different kind of strain, tensile or compressive. Not much stress relaxation is observed since the variation of the strain along the growth direction is sharp at the GaP and InAs containing layers. Author: Carlos K. Inoki (2011).