LNNano - Brazilian Nanotechnology National Laboratory

VacuTec Plasma System PECVD – Dual Chamber

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1. Dielectric Deposition

  • Process material: SiO2, Si3N4
  • Wafer size: 3-inch (maximum)
  • Sustrate Heating: up to 400°C
  • RF generator: 600W, 13.56 MHz
  • Four-gas line

2. Plasma Etching – Reactive Ion Etching (RIE-PE)

  • Anisotropic etching
  • Process material: oxides, dielectric and semiconductors
  • RF generator: 600W, 13.56 MHz
  • Four-gas line